Invention Grant
US08065471B2 Semiconductor device having a volatile semiconductor memory and a nonvolatile semiconductor memory which performs read/write using different size data units
有权
具有易失性半导体存储器的半导体器件和使用不同尺寸的数据单元执行读/写的非易失性半导体存储器
- Patent Title: Semiconductor device having a volatile semiconductor memory and a nonvolatile semiconductor memory which performs read/write using different size data units
- Patent Title (中): 具有易失性半导体存储器的半导体器件和使用不同尺寸的数据单元执行读/写的非易失性半导体存储器
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Application No.: US12552442Application Date: 2009-09-02
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Publication No.: US08065471B2Publication Date: 2011-11-22
- Inventor: Hirokuni Yano , Shinichi Kanno , Toshikatsu Hida , Hidenori Matsuzaki , Kazuya Kitsunai , Shigehiro Asano
- Applicant: Hirokuni Yano , Shinichi Kanno , Toshikatsu Hida , Hidenori Matsuzaki , Kazuya Kitsunai , Shigehiro Asano
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2007-339943 20071228; JP2008-046227 20080227
- Main IPC: G06F12/00
- IPC: G06F12/00

Abstract:
A semiconductor storage device includes a first memory area configured in a volatile semiconductor memory, second, third, and fourth memory areas configured in a nonvolatile semiconductor memory, and a controller which executes following processing. The controller executes a first processing for storing a plurality of data by the first unit in the first memory area, a second processing for storing data by a first management unit in the fourth memory area, a third processing for storing data by a second management unit in the third memory area, a fourth processing for moving an area of the third unit having the oldest allocation order in the fourth memory area to the second memory area, and a fifth processing for selecting data in the second memory area and copying the selected data to an empty area of the third unit in the second memory area.
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