Invention Grant
US08065474B2 Memory device with vertically embedded non-flash non-volatile memory for emulation of NAND flash memory
有权
具有垂直嵌入式非闪存非易失性存储器的存储器件,用于仿真NAND闪存
- Patent Title: Memory device with vertically embedded non-flash non-volatile memory for emulation of NAND flash memory
- Patent Title (中): 具有垂直嵌入式非闪存非易失性存储器的存储器件,用于仿真NAND闪存
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Application No.: US13065823Application Date: 2011-03-29
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Publication No.: US08065474B2Publication Date: 2011-11-22
- Inventor: Robert Norman
- Applicant: Robert Norman
- Assignee: Unity Semiconductor Corporation
- Current Assignee: Unity Semiconductor Corporation
- Main IPC: G06F12/00
- IPC: G06F12/00

Abstract:
A system and a method for emulating a NAND memory system are disclosed. In the method, a command associated with a NAND memory is received. After receipt of the command, a vertically configured non-volatile memory array is accessed based on the command. In the system, a vertically configured non-volatile memory array is connected with an input/output controller and a memory controller. The memory controller is also connected with the input/output controller. The memory controller is operative to interface with a command associated with a NAND memory and based on the command, to access the vertically configured non-volatile memory array for a data operation, such as a read operation or write operation. An erase operation on the vertically configured non-volatile memory array is not required prior to the write operation. The vertically configured non-volatile memory array can be partitioned into planes, blocks, and sub-planes, for example.
Public/Granted literature
- US20110185116A1 Memory device with vertically embedded non-flash non-volatile memory for emulation of NAND flash memory Public/Granted day:2011-07-28
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