Invention Grant
- Patent Title: Phase shift mask with two-phase clear feature
- Patent Title (中): 相移屏蔽具有两相清晰功能
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Application No.: US12637604Application Date: 2009-12-14
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Publication No.: US08067133B2Publication Date: 2011-11-29
- Inventor: Fei Wang
- Applicant: Fei Wang
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Knobbe Martens Olson & Bear LLP
- Main IPC: G03F1/00
- IPC: G03F1/00

Abstract:
Systems and methods are provided for use in photolithography. In one embodiment, a reticle is provided that comprises a phase shift and transmission control layer, wherein a gap in the phase shift and transmission control layer defines a line. Adjacent to the phase shift and transmission control layer is an optically transparent material, comprising a groove located within the line, wherein the groove comprises a region of reduced thickness in the optically transparent material. The region of reduced thickness serves to shift the phase of light passing through the groove, as compared to light passing through other regions of the optically transparent material. Thus, the reticle has a clear feature comprising light of two different phases.
Public/Granted literature
- US20100092878A1 PHASE SHIFT MASK WITH TWO-PHASE CLEAR FEATURE Public/Granted day:2010-04-15
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