Invention Grant
- Patent Title: Semiconductor device and a method of manufacturing the same
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US12982032Application Date: 2010-12-30
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Publication No.: US08067251B2Publication Date: 2011-11-29
- Inventor: Masachika Masuda , Toshihiko Usami
- Applicant: Masachika Masuda , Toshihiko Usami
- Applicant Address: JP Tokyo
- Assignee: Elpida Memory, Inc.
- Current Assignee: Elpida Memory, Inc.
- Current Assignee Address: JP Tokyo
- Agency: Antonelli, Terry, Stout & Kraus, LLP.
- Priority: JP2000-022802 20000131
- Main IPC: H01L21/66
- IPC: H01L21/66

Abstract:
A method including forming an intermediate product, the intermediate product being configured to include a wiring substrate including a plurality of first electrodes, a plurality of second electrodes and a plurality of test electrodes, a first semiconductor chip mounted over the wiring substrate and including a plurality of first pads electrically connected respectively to the first electrodes, and a second semiconductor chip stacked over the first semiconductor chip and including a plurality of second pads electrically connected respectively to the second electrodes; encapsulating the first and second semiconductor chips; and performing electrical tests on the first and second semiconductor chips by use of the test electrodes, after the encapsulating of the first and second semiconductor chips.
Public/Granted literature
- US20110195530A1 SEMICONDUCTOR DEVICE AND A METHOD OF MANUFACTURING THE SAME Public/Granted day:2011-08-11
Information query
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