Invention Grant
US08067286B2 Methods of forming recessed access devices associated with semiconductor constructions
有权
形成与半导体结构相关联的凹陷接入设备的方法
- Patent Title: Methods of forming recessed access devices associated with semiconductor constructions
- Patent Title (中): 形成与半导体结构相关联的凹陷接入设备的方法
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Application No.: US13012675Application Date: 2011-01-24
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Publication No.: US08067286B2Publication Date: 2011-11-29
- Inventor: Kunal R. Parekh , Suraj J. Mathew , Jigish D. Trivedi , John K. Zahurak , Sanh D. Tang
- Applicant: Kunal R. Parekh , Suraj J. Mathew , Jigish D. Trivedi , John K. Zahurak , Sanh D. Tang
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Wells St. John P.S.
- Main IPC: H01L21/336
- IPC: H01L21/336

Abstract:
The invention includes methods of forming recessed access devices. A substrate is provided to have recessed access device trenches therein. A pair of the recessed access device trenches are adjacent one another. Electrically conductive material is formed within the recessed access device trenches, and source/drain regions are formed proximate the electrically conductive material. The electrically conductive material and source/drain regions together are incorporated into a pair of adjacent recessed access devices. After the recessed access device trenches are formed within the substrate, an isolation region trench is formed between the adjacent recessed access devices and filled with electrically insulative material to form a trenched isolation region.
Public/Granted literature
- US20110117725A1 Methods of Forming Recessed Access Devices Associated with Semiconductor Constructions Public/Granted day:2011-05-19
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