Invention Grant
- Patent Title: Method of manufacturing semiconductor device including protective film
- Patent Title (中): 制造包括保护膜的半导体器件的方法
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Application No.: US12566040Application Date: 2009-09-24
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Publication No.: US08067294B2Publication Date: 2011-11-29
- Inventor: Toru Takayama , Yuugo Goto , Yumiko Fukumoto , Junya Maruyama , Takuya Tsurume
- Applicant: Toru Takayama , Yuugo Goto , Yumiko Fukumoto , Junya Maruyama , Takuya Tsurume
- Applicant Address: JP Atsugi-shi, Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Atsugi-shi, Kanagawa-ken
- Agency: Robinson Intellectual Property Law Office, P.C.
- Agent Eric J. Robinson
- Priority: JP2003-368058 20031028
- Main IPC: H01L21/20
- IPC: H01L21/20
Abstract:
It is an object of the invention to provide a lightweight semiconductor device having a highly reliable sealing structure which can prevent ingress of impurities such as moisture that deteriorate element characteristics, and a method of manufacturing thereof. A protective film having superior gas barrier properties (which is a protective film that is likely to damage an element if the protective film is formed on the element directly) is previously formed on a heat-resistant substrate other than a substrate with the element formed thereon. The protective film is peeled off from the heat-resistant substrate, and transferred over the substrate with the element formed thereon so as to seal the element.
Public/Granted literature
- US20100015737A1 SEMICONDUCTOR DEVICE, METHOD OF MANUFACTURING THEREOF, AND METHOD OF MANUFACTURING BASE MATERIAL Public/Granted day:2010-01-21
Information query
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