Invention Grant
US08067767B2 Display substrate having vertical thin film transistor having a channel including an oxide semiconductor pattern
有权
具有垂直薄膜晶体管的显示基板，具有包括氧化物半导体图案的沟道
- Patent Title: Display substrate having vertical thin film transistor having a channel including an oxide semiconductor pattern
- Patent Title (中): 具有垂直薄膜晶体管的显示基板，具有包括氧化物半导体图案的沟道
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Application No.: US12393521Application Date: 2009-02-26
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Publication No.: US08067767B2Publication Date: 2011-11-29
- Inventor: Pil-Sang Yun , Do-Hyun Kim , Byeong-Beom Kim , Bong-Kyun Kim
- Applicant: Pil-Sang Yun , Do-Hyun Kim , Byeong-Beom Kim , Bong-Kyun Kim
- Applicant Address: KR
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR
- Agency: Cantor Colburn LLP
- Priority: KR10-2008-0131006 20081222
- Main IPC: H01L29/786
- IPC: H01L29/786
Abstract:
A display substrate according to the present invention comprises a gate line formed on a substrate, a data line, a thin film transistor connected to the gate line and the data line respectively and pixel electrode connected to the thin film transistor, wherein a channel of the thin film transistor is formed in a direction perpendicular to the substrate and, a layer where the channel is formed includes an oxide semiconductor pattern. ON current of thin film transistor of the display substrate can be increased without loss of aperture ratio.
Public/Granted literature
- US20100155715A1 DISPLAY SUBSTRATE, AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2010-06-24
Information query
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