Invention Grant
- Patent Title: Semiconductor device with less power supply noise
- Patent Title (中): 半导体器件具有较少的电源噪声
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Application No.: US12323533Application Date: 2008-11-26
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Publication No.: US08067790B2Publication Date: 2011-11-29
- Inventor: Tetsuya Katou
- Applicant: Tetsuya Katou
- Applicant Address: JP Kanagawa
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Kanagawa
- Agency: Young & Thompson
- Priority: JP2007-310453 20071130
- Main IPC: H01L23/52
- IPC: H01L23/52

Abstract:
A semiconductor device includes a first power supply line; a second power supply line; a first cell arrangement area in which a first cell is arranged; and a switch area in which a switching transistor and a decoupling capacitance are arranged. The first cell is provided in a first well of a first conductive type, the switching transistor is provided in a second well of the first conductive type, and the decoupling capacitance is provided in a separation area of a second conductive type to separate the first well and the second well from each other. The switching transistor connects the first power supply line and the second power supply line in response to a control signal, the first cell operates with power supplied from the second power supply line, and the decoupling capacitance is connected with the first power supply line.
Public/Granted literature
- US20090140309A1 SEMICONDUCTOR DEVICE WITH LESS POWER SUPPLY NOISE Public/Granted day:2009-06-04
Information query
IPC分类: