Invention Grant
- Patent Title: Power supply architecture for structural ASIC
- Patent Title (中): 结构ASIC的电源架构
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Application No.: US12099530Application Date: 2008-04-08
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Publication No.: US08068349B2Publication Date: 2011-11-29
- Inventor: Chang-Yu Wu , Ming-Hsin Ku , Shang-Chih Hsieh , Hsin-Shih Wang
- Applicant: Chang-Yu Wu , Ming-Hsin Ku , Shang-Chih Hsieh , Hsin-Shih Wang
- Applicant Address: TW Science-Based Industrial Park, Hsin-Chu
- Assignee: Faraday Technology Corp.
- Current Assignee: Faraday Technology Corp.
- Current Assignee Address: TW Science-Based Industrial Park, Hsin-Chu
- Agent Winston Hsu; Scott Margo
- Main IPC: H05K1/11
- IPC: H05K1/11 ; H05K1/14

Abstract:
A power supply architecture for a structural application-specific integrated circuit (ASIC) is provided. The power supply architecture includes a first conductor and a second conductor. The first conductor is coupled to a fixed voltage. The first conductor at least passes through two edges of a cell. The first conductor and the second conductor are connected through a contact. The second conductor at most passes through one edge of the cell. The structural ASIC includes a first metal layer and a second metal layer. The first metal layer includes the first conductor. The second metal layer includes the second conductor.
Public/Granted literature
- US20090251872A1 POWER SUPPLY ARCHITECTURE FOR STRUCTURAL ASIC Public/Granted day:2009-10-08
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