Invention Grant
US08068371B2 Methods and systems to improve write response times of memory cells
有权
提高存储单元写入响应时间的方法和系统
- Patent Title: Methods and systems to improve write response times of memory cells
- Patent Title (中): 提高存储单元写入响应时间的方法和系统
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Application No.: US12347979Application Date: 2008-12-31
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Publication No.: US08068371B2Publication Date: 2011-11-29
- Inventor: Feroze A. Merchant , John Reginald Riley , Vinod Sannareddy
- Applicant: Feroze A. Merchant , John Reginald Riley , Vinod Sannareddy
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Garrett IP, LLC
- Main IPC: G11C7/10
- IPC: G11C7/10

Abstract:
Methods and systems to dynamically control state-retention strengths of a plurality of memory cells during a write operation to a subset of the memory cells. Dynamic control may include weakening state-retention strengths of the plurality of memory cells during a write operation to a subset of the memory cells, while preserving state-retention abilities of remaining ones of the plurality of memory cells. Weakening may include adjusting one or more resistances between one or more power supplies and the plurality of memory cells. Dynamic control may be selectively performed on portions of each of the memory cells in response to an input data logic state. Dynamic control may reduce a write contention within the subset of memory cells without disabling state-retention abilities of remaining ones of the plurality of memory cells, and may improve write response times of the memory cells.
Public/Granted literature
- US20100165756A1 METHODS AND SYSTEMS TO IMPROVE WRITE RESPONSE TIMES OF MEMORY CELLS Public/Granted day:2010-07-01
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