Invention Grant
- Patent Title: Current mode memory apparatus, systems, and methods
- Patent Title (中): 电流模式存储装置,系统和方法
-
Application No.: US12625035Application Date: 2009-11-24
-
Publication No.: US08068374B2Publication Date: 2011-11-29
- Inventor: Huy T. Vo
- Applicant: Huy T. Vo
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Schwegman, Lundberg & Woessner, P.A.
- Main IPC: G11C7/00
- IPC: G11C7/00

Abstract:
Some embodiments include a first circuit to drive signals at first circuit output nodes, and a second circuit to generate output signals at second circuit output nodes. The second circuit includes a first transistor coupled between a supply node and a first node of the second circuit output nodes and a second transistor coupled between the supply node and a second node of the second circuit output nodes. Each of the first and second transistors includes a gate coupled to one of the first and second nodes. Other embodiments including additional apparatus, systems, and methods are disclosed.
Public/Granted literature
- US20100074036A1 CURRENT MODE MEMORY APPARATUS, SYSTEMS, AND METHODS Public/Granted day:2010-03-25
Information query