Invention Grant
- Patent Title: Generating simulated diffraction signal using a dispersion function relating process parameter to dispersion
- Patent Title (中): 使用将过程参数与色散相关联的色散函数生成模拟衍射信号
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Application No.: US11858058Application Date: 2007-09-19
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Publication No.: US08069020B2Publication Date: 2011-11-29
- Inventor: Shifang Li , Hanyou Chu
- Applicant: Shifang Li , Hanyou Chu
- Applicant Address: JP Tokyo
- Assignee: Tokyo Electron Limited
- Current Assignee: Tokyo Electron Limited
- Current Assignee Address: JP Tokyo
- Agent Manuel Madriaga
- Main IPC: G06G7/48
- IPC: G06G7/48

Abstract:
A first wafer is fabricated using a first value for a process parameter specifying a process condition in fabricating the structure. A first value of a dispersion is measured from the first wafer. A second wafer is fabricated using a second value for the process parameter. A second value of the dispersion is measured from the second wafer. A third wafer is fabricated using a third value for the process parameter. The first, second, and third values for the process parameter are different from each other. A third value of the dispersion is measured from the third wafer. A dispersion function is defined to relate the process parameter to the dispersion using the first, second, and third values for the process parameter and the measured first, second, and third values of the dispersion. The simulated diffraction signal is generated using the defined dispersion function. The simulated diffraction signal is stored.
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