Invention Grant
- Patent Title: Banded indirection for nonvolatile memory devices
- Patent Title (中): 非易失性存储器件的带状间接
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Application No.: US12165562Application Date: 2008-06-30
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Publication No.: US08069299B2Publication Date: 2011-11-29
- Inventor: Brent Chartrand
- Applicant: Brent Chartrand
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Schubert Law Group PLLC
- Main IPC: G06F12/00
- IPC: G06F12/00

Abstract:
Methods, apparatuses, and computer program products that enable banded indirection for nonvolatile memory devices, such as flash memory devices, are disclosed. One or more embodiments comprise a method for performing banded indirection when accessing data of a nonvolatile device. The methods comprise tracking fragmentation of a band of physical addresses of the nonvolatile memory device, storing a physical address of the band, and accessing data of a logical address of the band via the stored physical address based on the fragmentation of the band. Some embodiments comprise apparatuses for accessing data of nonvolatile devices using banded indirection. The embodiments comprise a nonvolatile memory element to store data, wherein the nonvolatile memory element has bands of physical addresses, a fragmentation detector to detect fragmentation of a band of the nonvolatile memory, and a data access module to access data of the band via a physical address based on the fragmentation.
Public/Granted literature
- US20090327582A1 Banded Indirection for Nonvolatile Memory Devices Public/Granted day:2009-12-31
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