Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US12644896Application Date: 2009-12-22
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Publication No.: US08069386B2Publication Date: 2011-11-29
- Inventor: Kaoru Higashino
- Applicant: Kaoru Higashino
- Applicant Address: JP Kanagawa
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Kanagawa
- Agency: Foley & Lardner LLP
- Priority: JP2008-326649 20081223
- Main IPC: G06F11/00
- IPC: G06F11/00 ; G01R31/28 ; G01R31/3187

Abstract:
A semiconductor device includes a CPU, a memory, a memory BIST circuit, a first selector that selects and outputs an address and control signal from the memory BIST circuit, when performing a test using the memory BIST circuit, and selects and outputs an address and control signal of the CPU when not performing a test using the memory BIST circuit, a second selector that selects and outputs write data from the memory BIST circuit when performing a test using the memory BIST circuit, and selects and outputs write data of the CPU when not performing a test using the memory BIST circuit, a first flip-flop that samples an output of the first selector (11) and a second flip-flop that samples an output of the second selector. An address and control signal and write data output from the first and second flip-flops are supplied to an address and control terminal and a write data terminal of the memory.
Public/Granted literature
- US20100162056A1 SEMICONDUCTOR DEVICE Public/Granted day:2010-06-24
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