Invention Grant
- Patent Title: Electron emitter structure and associated method of producing field emission displays
- Patent Title (中): 电子发射体结构及相关的场致发射显示方法
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Application No.: US12122176Application Date: 2008-05-16
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Publication No.: US08076832B2Publication Date: 2011-12-13
- Inventor: Hiroyuki Okita
- Applicant: Hiroyuki Okita
- Applicant Address: JP Tokyo
- Assignee: Sony Corporation
- Current Assignee: Sony Corporation
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: SG200703695 20070525
- Main IPC: H01J1/02
- IPC: H01J1/02
Abstract:
A method of forming an electron emitter structure for use in a field emission display, or as a field emission backlight for an LCD display is provided. The electron emitter structure is formed by depositing mask elements onto an laminar Al substrate, and etching the Al substrate chemically through gaps between the mask elements, such that a spikes are formed on the substrate. These spikes are then covered with an electron emitter material. The spikes can be formed with a desired pitch/height ratio.
Public/Granted literature
- US20080290777A1 ELECTRON EMITTER STRUCTURE AND ASSOCIATED METHOD OF PRODUCING FIELD EMISSION DISPLAYS Public/Granted day:2008-11-27
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