Invention Grant
- Patent Title: Resistive memory device and operating method thereof
- Patent Title (中): 电阻式存储器件及其操作方法
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Application No.: US12801536Application Date: 2010-06-14
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Publication No.: US08077497B2Publication Date: 2011-12-13
- Inventor: Kentaro Ogata
- Applicant: Kentaro Ogata
- Applicant Address: JP Tokyo
- Assignee: Sony Corporation
- Current Assignee: Sony Corporation
- Current Assignee Address: JP Tokyo
- Agency: Rader, Fishman & Grauer PLLC
- Priority: JP2009-176848 20090729
- Main IPC: G11C11/00
- IPC: G11C11/00
Abstract:
A resistive memory device includes: a storage element; a first line and a second line; a first drive controller; and a second drive controller.
Public/Granted literature
- US20110026300A1 Resistive memory device and operating method thereof Public/Granted day:2011-02-03
Information query
