Invention Grant
- Patent Title: E/P durability by using a sub-range of a full programming range
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Application No.: US13018152Application Date: 2011-01-31
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Publication No.: US08077518B2Publication Date: 2011-12-13
- Inventor: Kwok W. Yeung , Meng-Kun Lee
- Applicant: Kwok W. Yeung , Meng-Kun Lee
- Applicant Address: US CA Santa Clara
- Assignee: Link—A—Media Devices Corporation
- Current Assignee: Link—A—Media Devices Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Van Pelt, Yi & James LLP
- Main IPC: G11C16/06
- IPC: G11C16/06
Abstract:
A NAND flash memory system is controlled by determining whether to change a value of a voltage threshold. The voltage threshold is associated with an erase operation to a portion of a NAND flash memory chip. In the event it is determined to change the value of the voltage threshold, the value of the voltage threshold is changed and the changed value of the voltage threshold and an identifier associated with the portion of the NAND flash memory chip is stored.
Public/Granted literature
- US20110125959A1 E/P DURABILITY BY USING A SUB-RANGE OF A FULL PROGRAMMING RANGE Public/Granted day:2011-05-26
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