Invention Grant
US08077536B2 Method of operating semiconductor memory device with floating body transistor using silicon controlled rectifier principle
有权
使用可控硅整流器原理操作具有浮体晶体管的半导体存储器件的方法
- Patent Title: Method of operating semiconductor memory device with floating body transistor using silicon controlled rectifier principle
- Patent Title (中): 使用可控硅整流器原理操作具有浮体晶体管的半导体存储器件的方法
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Application No.: US12533661Application Date: 2009-07-31
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Publication No.: US08077536B2Publication Date: 2011-12-13
- Inventor: Yuniarto Widjaja
- Applicant: Yuniarto Widjaja
- Applicant Address: US CA San Jose
- Assignee: Zeno Semiconductor, Inc.
- Current Assignee: Zeno Semiconductor, Inc.
- Current Assignee Address: US CA San Jose
- Agency: Law Office of Alan W. Cannon
- Agent Alan W. Cannon
- Main IPC: G11C7/00
- IPC: G11C7/00
Abstract:
A method of maintaining the data state of a semiconductor dynamic random access memory cell is provided, wherein the memory cell comprises a substrate being made of a material having a first conductivity type selected from p-type conductivity type and n-type conductivity type; a first region having a second conductivity type selected from the p-type and n-type conductivity types, the second conductivity type being different from the first conductivity type; a second region having the second conductivity type, the second region being spaced apart from the first region; a buried layer in the substrate below the first and second regions, spaced apart from the first and second regions and having the second conductivity type; a body region formed between the first and second regions and the buried layer, the body region having the first conductivity type; and a gate positioned between the first and second regions and adjacent the body region.
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