Invention Grant
US08080201B2 Method for producing sputtering target material for Ni-W based interlayer
有权
用于制造Ni-W系夹层的溅射靶材的方法
- Patent Title: Method for producing sputtering target material for Ni-W based interlayer
- Patent Title (中): 用于制造Ni-W系夹层的溅射靶材的方法
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Application No.: US12173337Application Date: 2008-07-15
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Publication No.: US08080201B2Publication Date: 2011-12-20
- Inventor: Toshiyuki Sawada , Akihiko Yanagitani
- Applicant: Toshiyuki Sawada , Akihiko Yanagitani
- Applicant Address: JP Himeji-Shi, Hyogo-Ken
- Assignee: Sanyo Special Steel Co., Ltd.
- Current Assignee: Sanyo Special Steel Co., Ltd.
- Current Assignee Address: JP Himeji-Shi, Hyogo-Ken
- Agency: The Webb Law Firm
- Priority: JP2007-186421 20070718
- Main IPC: B22F3/15
- IPC: B22F3/15

Abstract:
There is provided a method for producing sputtering target materials which are used for a Ni—W based interlayer in a perpendicular magnetic recording medium. In this producing method, a Ni—W based alloy powder is prepared as a raw material powder. The alloy powder comprises 5 to 20 at % of W and the balance Ni and unavoidable impurities and is produced by gas atomization. The raw material powder is consolidated at a temperature ranging from 900 to 1150° C. This producing method makes it possible to significantly restrain expansion of the powder-filled billet in the consolidation step, thus efficiently producing Ni—W based sputtering target materials with stable qualities.
Public/Granted literature
- US20090022614A1 Method for Producing Sputtering Target Material for Ni-W Based Interlayer Public/Granted day:2009-01-22
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