Invention Grant
US08080438B2 Organic semiconductor film forming method, organic semiconductor film and organic thin film transistor
有权
有机半导体膜形成方法，有机半导体膜和有机薄膜晶体管
- Patent Title: Organic semiconductor film forming method, organic semiconductor film and organic thin film transistor
- Patent Title (中): 有机半导体膜形成方法，有机半导体膜和有机薄膜晶体管
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Application No.: US11922857Application Date: 2006-06-23
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Publication No.: US08080438B2Publication Date: 2011-12-20
- Inventor: Reiko Obuchi , Katsura Hirai , Chiyoko Takemura
- Applicant: Reiko Obuchi , Katsura Hirai , Chiyoko Takemura
- Applicant Address: JP Tokyo
- Assignee: Konica Minolta Holdings, Inc.
- Current Assignee: Konica Minolta Holdings, Inc.
- Current Assignee Address: JP Tokyo
- Agency: Cozen O'Connor
- Priority: JP2005-185267 20050624
- International Application: PCT/JP2006/312576 WO 20060623
- International Announcement: WO2006/137512 WO 20061228
- Main IPC: H01L21/00
- IPC: H01L21/00
Abstract:
A method for forming an organic semiconductor film having a high carrier mobility is provided by having an average volatilization rate of a solvent within a prescribed range during a step of drying, at the time of applying a coating solution, which includes an organic semiconductor material and a non-halogen solvent, on a substrate. In such forming method, characteristic fluctuation in repeated use of the organic semiconductor film is suppressed, and an organic thin film transistor having an excellent film forming characteristic even on an insulator with reduced gate voltage threshold can be obtained.
Public/Granted literature
- US20100090199A1 Organic Semiconductor Film Forming Method, Organic Semiconductor Film and Organic Thin Film Transistor Public/Granted day:2010-04-15
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