Invention Grant
US08080462B2 Mark structure for coarse wafer alignment and method for manufacturing such a mark structure
有权
用于粗晶片对准的标记结构和用于制造这种标记结构的方法
- Patent Title: Mark structure for coarse wafer alignment and method for manufacturing such a mark structure
- Patent Title (中): 用于粗晶片对准的标记结构和用于制造这种标记结构的方法
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Application No.: US13160864Application Date: 2011-06-15
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Publication No.: US08080462B2Publication Date: 2011-12-20
- Inventor: Patrick Warnaar
- Applicant: Patrick Warnaar
- Applicant Address: NL Veldhoven
- Assignee: ASML Netherlands B.V.
- Current Assignee: ASML Netherlands B.V.
- Current Assignee Address: NL Veldhoven
- Agency: Sterne, Kessler, Goldstein & Fox P.L.L.C.
- Main IPC: H01L21/76
- IPC: H01L21/76 ; H01L23/544
Abstract:
A method for forming a mark structure on a substrate comprising a plurality of lines. The lines extend parallel to each other in a first direction and are arranged with a pitch between each pair of lines that is directed in a second direction perpendicular to the first direction. The pitch between each pair of selected lines differs from the pitch between each other pair of selected lines.
Public/Granted literature
- US20110244647A1 Mark Structure for Coarse Wafer Alignment and Method for Manufacturing Such a Mark Structure Public/Granted day:2011-10-06
Information query
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