Invention Grant
US08080822B2 Solution-processed inorganic films for organic thin film transistors
失效
用于有机薄膜晶体管的溶液处理无机膜
- Patent Title: Solution-processed inorganic films for organic thin film transistors
- Patent Title (中): 用于有机薄膜晶体管的溶液处理无机膜
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Application No.: US12302155Application Date: 2007-05-22
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Publication No.: US08080822B2Publication Date: 2011-12-20
- Inventor: Ebinazar Benjamin Namdas , Tommy Cahyadi , G. Subodh Mhaisalkar , Pooi See Lee , Zhikuan Chen , Yeng Ming Lam , Lixin Song
- Applicant: Ebinazar Benjamin Namdas , Tommy Cahyadi , G. Subodh Mhaisalkar , Pooi See Lee , Zhikuan Chen , Yeng Ming Lam , Lixin Song
- Applicant Address: SG Singapore SG Singapore
- Assignee: Nanyang Technological University,Agency for Science, Technology and Research
- Current Assignee: Nanyang Technological University,Agency for Science, Technology and Research
- Current Assignee Address: SG Singapore SG Singapore
- Agency: Dickstein Shapiro LLP
- International Application: PCT/SG2007/000142 WO 20070522
- International Announcement: WO2007/136351 WO 20071129
- Main IPC: H01L29/72
- IPC: H01L29/72
Abstract:
A method for fabricating a sol-gel film composition for use in a thin film transistor is disclosed. The method includes fabricating the sol-gel dielectric composition by solution processing at a temperature in the range 60° C. to 225° C. The sol-gel film made by the method, and an organic thin-film transistor incorporating the sol-gel film are also disclosed.
Public/Granted literature
- US20090267058A1 SOLUTION-PROCESSED INORGANIC FILMS FOR ORGANIC THIN FILM TRANSISTORS Public/Granted day:2009-10-29
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