Invention Grant
US08084367B2 Etching, cleaning and drying methods using supercritical fluid and chamber systems using these methods
有权
使用这些方法使用超临界流体和室系统的蚀刻，清洁和干燥方法
- Patent Title: Etching, cleaning and drying methods using supercritical fluid and chamber systems using these methods
- Patent Title (中): 使用这些方法使用超临界流体和室系统的蚀刻，清洁和干燥方法
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Application No.: US11752834Application Date: 2007-05-23
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Publication No.: US08084367B2Publication Date: 2011-12-27
- Inventor: Hyo-san Lee , Chang-Ki Hong , Kun-Tack Lee , Woo-Gwan Shim , Jeong-Nam Han , Jung-Min Oh , Kwon-Taek Lim , Ha-Soo Hwang , Haldorai Yuvaraj , Jae-Mok Jung
- Applicant: Hyo-san Lee , Chang-Ki Hong , Kun-Tack Lee , Woo-Gwan Shim , Jeong-Nam Han , Jung-Min Oh , Kwon-Taek Lim , Ha-Soo Hwang , Haldorai Yuvaraj , Jae-Mok Jung
- Applicant Address: KR Suwon-Si KR Busan
- Assignee: Samsung Electronics Co., Ltd,Pukyong National University
- Current Assignee: Samsung Electronics Co., Ltd,Pukyong National University
- Current Assignee Address: KR Suwon-Si KR Busan
- Agency: F. Chau & Associates, LLC
- Priority: KR10-2006-0046667 20060524; KR10-2007-0001514 20070105
- Main IPC: H01L21/302
- IPC: H01L21/302
Abstract:
Provided herein are etching, cleaning and drying methods using a supercritical fluid, and a chamber system for conducting the same. The etching method includes etching the material layer using a supercritical carbon dioxide in which an etching chemical is dissolved, and removing an etching by-product created from a reaction between the material layer and the etching chemical using a supercritical carbon dioxide in which a cleaning chemical is dissolved. Methods of manufacturing a semiconductor device are also provided.
Public/Granted literature
- US20070293054A1 ETCHING, CLEANING AND DRYING METHODS USING SUPERCRITICAL FLUID AND CHAMBER SYSTEMS USING THESE METHODS Public/Granted day:2007-12-20
Information query
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