Invention Grant
US08084799B2 Integrated circuit with memory having a step-like programming characteristic
有权
具有阶梯状编程特性的具有存储器的集成电路
- Patent Title: Integrated circuit with memory having a step-like programming characteristic
- Patent Title (中): 具有阶梯状编程特性的具有存储器的集成电路
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Application No.: US11488422Application Date: 2006-07-18
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Publication No.: US08084799B2Publication Date: 2011-12-27
- Inventor: Thomas Happ , Jan Boris Philipp
- Applicant: Thomas Happ , Jan Boris Philipp
- Applicant Address: DE Munich
- Assignee: Qimonda AG
- Current Assignee: Qimonda AG
- Current Assignee Address: DE Munich
- Agency: Dicke, Billig & Czaja, PLLC
- Main IPC: H01L27/108
- IPC: H01L27/108
Abstract:
A memory cell includes a first electrode, a second electrode, and phase change material between the first electrode and the second electrode. The phase change material has a step-like programming characteristic. The first electrode, the second electrode, and the phase change material form a via or trench memory cell.
Public/Granted literature
- US20080017894A1 INTEGRATED CIRCUIT WITH MEMORY HAVING A STEP-LIKE PROGRAMMING CHARACTERISTIC Public/Granted day:2008-01-24
Information query
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