Invention Grant
- Patent Title: Zirconium silicon oxide films
- Patent Title (中): 氧化锆锆膜
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Application No.: US12124040Application Date: 2008-05-20
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Publication No.: US08084808B2Publication Date: 2011-12-27
- Inventor: Kie Y. Ahn , Leonard Forbes
- Applicant: Kie Y. Ahn , Leonard Forbes
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Schwegman, Lundberg & Woessner, P.A.
- Main IPC: H01L29/788
- IPC: H01L29/788

Abstract:
Electronic apparatus and systems include structures having a dielectric layer containing a zirconium silicon oxide film. A zirconium silicon oxide film may be disposed in an integrated circuit, as well as in a variety of other electronic devices. Additional apparatus, systems, and methods are disclosed.
Public/Granted literature
- US20080217676A1 ZIRCONIUM SILICON OXIDE FILMS Public/Granted day:2008-09-11
Information query
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