Invention Grant
- Patent Title: Non-uniform switching based non-volatile magnetic based memory
- Patent Title (中): 基于非均匀开关的非易失性磁性存储器
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Application No.: US11674124Application Date: 2007-02-12
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Publication No.: US08084835B2Publication Date: 2011-12-27
- Inventor: Rajiv Yadav Ranjan , Petro Estakhri , Mahmud Assar , Parviz Keshtbod
- Applicant: Rajiv Yadav Ranjan , Petro Estakhri , Mahmud Assar , Parviz Keshtbod
- Applicant Address: US CA Fremont
- Assignee: Avalanche Technology, Inc.
- Current Assignee: Avalanche Technology, Inc.
- Current Assignee Address: US CA Fremont
- Agency: IPxLAW Group LLP
- Agent Maryam Imam
- Main IPC: H01L29/82
- IPC: H01L29/82 ; G11C11/00
Abstract:
A non-uniform switching based non-volatile magnetic memory element includes a fixed layer, a barrier layer formed on top of the fixed layer, a first free layer formed on top of the barrier layer, a non-uniform switching layer (NSL) formed on top of the first free layer, and a second free layer formed on top of the non-uniform switching layer. Switching current is applied, in a direction that is substantially perpendicular to the fixed layer, barrier layer, first free layer, non-uniform switching layer and the second free layer causing switching between states of the first free layer, second free layer and non-uniform switching layer with substantially reduced switching current.
Public/Granted literature
- US20080094886A1 NON-UNIFORM SWITCHING BASED NON-VOLATILE MAGNETIC BASED MEMORY Public/Granted day:2008-04-24
Information query
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