Invention Grant
- Patent Title: Systems and methods for providing high-density capacitors
- Patent Title (中): 用于提供高密度电容器的系统和方法
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Application No.: US12435831Application Date: 2009-05-05
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Publication No.: US08084841B2Publication Date: 2011-12-27
- Inventor: MarkondeyaRaj Pulugurtha , Andreas Fenner , Anna Malin , Dasharatham Janagama Goud , Rao Tummala
- Applicant: MarkondeyaRaj Pulugurtha , Andreas Fenner , Anna Malin , Dasharatham Janagama Goud , Rao Tummala
- Applicant Address: US GA Atlanta US MN Minneapolis
- Assignee: Georgia Tech Research,Medtronic, Inc.
- Current Assignee: Georgia Tech Research,Medtronic, Inc.
- Current Assignee Address: US GA Atlanta US MN Minneapolis
- Agency: Troutman Sanders LLP
- Agent Ryan A. Schneider, Esq.
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01G4/005
Abstract:
The present invention describes systems and methods for providing high-density capacitors. An exemplary embodiment of the present invention provides a high-density capacitor system comprising a substrate and a porous conductive layer formed on the substrate, wherein the porous conductive layer is formed in accordance with a predetermined pattern. Furthermore, the high-density capacitor system includes a dielectric material formed on the porous conductive layer and a second conductive layer formed on the dielectric material. Additionally, the high-density capacitor system includes a plurality of conductive pads configured in communication with the second conductive layer.
Public/Granted literature
- US20100283122A1 SYSTEMS AND METHODS FOR PROVIDING HIGH-DENSITY CAPACITORS Public/Granted day:2010-11-11
Information query
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