Invention Grant
US08084866B2 Microelectronic devices and methods for filling vias in microelectronic devices
有权
用于在微电子器件中填充通孔的微电子器件和方法
- Patent Title: Microelectronic devices and methods for filling vias in microelectronic devices
- Patent Title (中): 用于在微电子器件中填充通孔的微电子器件和方法
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Application No.: US10733226Application Date: 2003-12-10
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Publication No.: US08084866B2Publication Date: 2011-12-27
- Inventor: William M. Hiatt , Kyle K. Kirby
- Applicant: William M. Hiatt , Kyle K. Kirby
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Perkins Coie LLP
- Main IPC: H01L23/52
- IPC: H01L23/52

Abstract:
Microelectronic devices and methods for filling vias and forming conductive interconnects in microfeature workpieces and dies are disclosed herein. In one embodiment, a method includes providing a microfeature workpiece having a plurality of dies and at least one passage extending through the microfeature workpiece from a first side of the microfeature workpiece to an opposite second side of the microfeature workpiece. The method can further include forming a conductive plug in the passage adjacent to the first side of the microelectronic workpiece, and depositing conductive material in the passage to at least generally fill the passage from the conductive plug to the second side of the microelectronic workpiece.
Public/Granted literature
- US20050127478A1 Microelectronic devices and methods for filling vias in microelectronic devices Public/Granted day:2005-06-16
Information query
IPC分类: