Invention Grant
- Patent Title: Level shift circuit
- Patent Title (中): 电平移位电路
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Application No.: US12588689Application Date: 2009-10-23
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Publication No.: US08085078B2Publication Date: 2011-12-27
- Inventor: Yuri Honda
- Applicant: Yuri Honda
- Applicant Address: JP Kawasaki-shi, Kanagawa
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Kawasaki-shi, Kanagawa
- Agency: McGinn Intellectual Property Law Group, PLLC
- Priority: JP2008-281411 20081031
- Main IPC: H03L5/00
- IPC: H03L5/00

Abstract:
A level shift circuit includes a first resistor with one end connected to GND, a first transistor with a drain and a gate connected to the other end of the first resistor, and a source connected to a first power supply, a second transistor with a source connected to the first power supply, and a gate connected to the drain and the gate of the first transistor, a second resistor with one end connected to a drain of the second transistor, a third transistor with a source connected to the other end of the second resistor, and a gate connected to an input terminal, a first current source connected between a second power supply and a drain of the third transistor; and a fourth transistor connected between an output terminal and the first power supply with a gate connected to the drain of the second transistor.
Public/Granted literature
- US20100109742A1 Level shift circuit Public/Granted day:2010-05-06
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