Invention Grant
- Patent Title: Broadband transition from a via interconnection to a planar transmission line in a multilayer substrate
- Patent Title (中): 从多孔衬底中的通孔互连到平面传输线的宽带转变
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Application No.: US13187910Application Date: 2011-07-21
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Publication No.: US08085112B2Publication Date: 2011-12-27
- Inventor: Taras Kushta , Kaoru Narita , Tomoyuki Kaneko , Shin-ichi Ogou
- Applicant: Taras Kushta , Kaoru Narita , Tomoyuki Kaneko , Shin-ichi Ogou
- Applicant Address: JP Tokyo JP Kanagawa
- Assignee: NEC Corporation,Renesas Electronics Corporation
- Current Assignee: NEC Corporation,Renesas Electronics Corporation
- Current Assignee Address: JP Tokyo JP Kanagawa
- Agency: Sughrue Mion, PLLC
- Priority: JP2006-058676 20060303
- Main IPC: H03H7/38
- IPC: H03H7/38

Abstract:
According to one embodiment, a broadband transition to joint a via structure and a planar transmission line in a multilayer substrate is formed as an intermediate connection between the signal via pad and the planar transmission line disposed at the same conductor layer. The transverse dimensions of the transition are equal to the via pad diameter at the one end and strip width at another end; the length of the transition can be equal to the characteristic dimensions of the clearance hole in the direction of the planar transmission line or defined as providing the minimal excess inductive reactance in time-domain according to numerical diagrams obtained by three-dimensional full-wave simulations.
Public/Granted literature
- US20110279195A1 BROADBAND TRANSITION FROM A VIA INTERCONNECTION TO A PLANAR TRANSMISSION LINE IN A MULTILAYER SUBSTRATE Public/Granted day:2011-11-17
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