Invention Grant
- Patent Title: Integrated capacitor arrangement for ultrahigh capacitance values
- Patent Title (中): 用于超高电容值的集成电容器布置
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Application No.: US12092608Application Date: 2006-11-02
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Publication No.: US08085524B2Publication Date: 2011-12-27
- Inventor: Freddy Roozeboom , Johan H. Klootwijk , Antonius L. A. M. Kemmeren , Derk Reefman , Johannes F. C. M. Verhoeven
- Applicant: Freddy Roozeboom , Johan H. Klootwijk , Antonius L. A. M. Kemmeren , Derk Reefman , Johannes F. C. M. Verhoeven
- Applicant Address: FR Caen
- Assignee: IPDIA
- Current Assignee: IPDIA
- Current Assignee Address: FR Caen
- Agency: Hamre, Schumann, Mueller & Larson, P.C.
- Priority: EP05110488 20051108
- International Application: PCT/IB2006/054063 WO 20061102
- International Announcement: WO2007/054858 WO 20070518
- Main IPC: H01G4/228
- IPC: H01G4/228

Abstract:
An electronic device includes at least one trench capacitor that can also take the form of an inverse structure, a pillar capacitor. An alternating layer sequence of at least two dielectric layers and at least two electrically conductive layers is provided in the trench capacitor or on the pillar capacitor, such that the at least two electrically conductive layers are electrically isolated from each other and from the substrate by respective ones of the at least two dielectric layers. A set of internal contact pads is provided, and each internal contact pad is connected with a respective one of the electrically conductive layers or with the substrate. A range of switching opportunities is opened up that allows tuning the specific capacitance of the capacitor to a desired value.
Public/Granted literature
- US20080291601A1 Integrated Capacitor Arrangement for Ultrahigh Capacitance Values Public/Granted day:2008-11-27
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