A phase change random access memory device is disclosed including a first electrode, a second electrode, a phase change material layer between the first and second electrode, a plurality of gate layers formed along the phase change material layer, an insulating film between the phase change material layer and the plurality of gate layers, and a plurality of interlayer insulating layers between the plurality of gate layers and between the first and second electrode and the plurality of gate layers, in which multiple bits of information may be stored in a single memory cell corresponding to the positions of the plurality of gate layers.