Invention Grant
US08085615B2 Multi-state resistance changing memory with a word line driver for applying a same program voltage to the word line
有权
具有用于向字线施加相同编程电压的字线驱动器的多状态电阻变化存储器
- Patent Title: Multi-state resistance changing memory with a word line driver for applying a same program voltage to the word line
- Patent Title (中): 具有用于向字线施加相同编程电压的字线驱动器的多状态电阻变化存储器
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Application No.: US11724773Application Date: 2007-03-16
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Publication No.: US08085615B2Publication Date: 2011-12-27
- Inventor: Masao Taguchi
- Applicant: Masao Taguchi
- Applicant Address: US CA Sunnyvale
- Assignee: Spansion LLC
- Current Assignee: Spansion LLC
- Current Assignee Address: US CA Sunnyvale
- Agency: Eschweiler & Associates, LLC
- Main IPC: G11C8/08
- IPC: G11C8/08
Abstract:
A resistance changing memory unit cell includes a current control component operably coupled to a bit sense line, and a resistance changing memory element coupled between the current control component and a word line.
Public/Granted literature
- US20080158935A1 Resistance changing memory cell architecture Public/Granted day:2008-07-03
Information query
