Invention Grant
- Patent Title: Power semiconductor module including a contact element
- Patent Title (中): 功率半导体模块包括接触元件
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Application No.: US12358987Application Date: 2009-01-23
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Publication No.: US08087943B2Publication Date: 2012-01-03
- Inventor: Thilo Stolze
- Applicant: Thilo Stolze
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Dicke, Billig & Czaja, PLLC
- Priority: DE102008005547.6 20080123
- Main IPC: H01R12/00
- IPC: H01R12/00 ; H05K1/00

Abstract:
A power semiconductor module including a contact element. One embodiment provides an electrically conductive contact element extending in a longitudinal direction and having a first end and a second end lying opposite the first end. The contact element has a first flange at its first end. The first flange is embodied such that when the contact element is placed with the first flange ahead onto a plane perpendicular to the longitudinal direction, the first flange has with the plane a number of first contact areas spaced apart from one another.
Public/Granted literature
- US20090194884A1 POWER SEMICONDUCTOR MODULE INCLUDING A CONTACT ELEMENT Public/Granted day:2009-08-06
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