Invention Grant
- Patent Title: Deep-eutectic melt growth of nitride crystals
- Patent Title (中): 氮化物晶体的深共熔融生长
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Application No.: US12126334Application Date: 2008-05-23
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Publication No.: US08088220B2Publication Date: 2012-01-03
- Inventor: Glen A. Slack , Sandra B. Schujman
- Applicant: Glen A. Slack , Sandra B. Schujman
- Applicant Address: US NY Green Island
- Assignee: Crystal IS, Inc.
- Current Assignee: Crystal IS, Inc.
- Current Assignee Address: US NY Green Island
- Agency: Bingham McCutchen LLP
- Main IPC: C30B19/00
- IPC: C30B19/00 ; C03B19/06
Abstract:
In accordance with various embodiments, crystalline structures are formed by providing, at a growth temperature, a liquid comprising AlN and having a quality factor greater than approximately 0.14 and forming solid AlN from the liquid, the growth temperature being lower than the melting point of AlN.
Public/Granted literature
- US20090050050A1 DEEP-EUTECTIC MELT GROWTH OF NITRIDE CRYSTALS Public/Granted day:2009-02-26
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