Invention Grant
- Patent Title: Methods of forming reticles configured for imprint lithography
- Patent Title (中): 形成用于压印光刻的掩模版的方法
-
Application No.: US10903295Application Date: 2004-07-29
-
Publication No.: US08088293B2Publication Date: 2012-01-03
- Inventor: Gurtej S. Sandhu
- Applicant: Gurtej S. Sandhu
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Wells St. John P.S.
- Main IPC: C23F1/00
- IPC: C23F1/00

Abstract:
The invention includes methods of forming reticles configured for imprint lithography, methods of forming capacitor container openings, and methods in which capacitor container openings are incorporated into DRAM arrays. An exemplary method of forming a reticle includes formation of a radiation-imageable layer over a material. A lattice pattern is then formed within the radiation-imageable layer, with the lattice pattern defining a plurality of islands of the radiation-imageable layer. The lattice-patterned radiation-imageable layer is utilized as a mask while subjecting the material under the lattice-patterned layer to an etch which transfers the lattice pattern into the material. The etch forms a plurality of pillars which extend only partially into the material, with the pillars being spaced from one another by gaps. The gaps are subsequently narrowed with a second material which only partially fills the gaps.
Public/Granted literature
Information query