Invention Grant
US08088296B2 Plasma processing device and plasma processing method 有权
等离子体处理装置和等离子体处理方法

  • Patent Title: Plasma processing device and plasma processing method
  • Patent Title (中): 等离子体处理装置和等离子体处理方法
  • Application No.: US11574570
    Application Date: 2005-05-19
  • Publication No.: US08088296B2
    Publication Date: 2012-01-03
  • Inventor: Katsuhiro Yamazaki
  • Applicant: Katsuhiro Yamazaki
  • Applicant Address: JP Kanagawa
  • Assignee: Shibaura Mechatronics Corporation
  • Current Assignee: Shibaura Mechatronics Corporation
  • Current Assignee Address: JP Kanagawa
  • Priority: JP2004-254241 20040901
  • International Application: PCT/JP2005/009172 WO 20050519
  • International Announcement: WO2006/025136 WO 20060309
  • Main IPC: B44C1/22
  • IPC: B44C1/22
Plasma processing device and plasma processing method
Abstract:
The present invention prevents drop in the function of a plasma processing device caused by reduction of a plasma generating chamber by reductive plasma that is generated from the introduced process gas, and extends the life of members which are in contact with reductive plasma, especially the plasma generating chamber member. The plasma processing device of this embodiment is a device for treating the surface of a processing subject S using radicals generated by exciting a process gas, wherein a plasma generating chamber member 6, having a internal plasma generating chamber 6a, is connected to a gas introduction tube 5 attached to the outside of the process chamber 1, and a gas regulator 7 is provided on the end of the plasma generating chamber member 6. The configuration is such that when the plasma generating chamber member 6 is reduced by the reductive plasma generated from the gas introduced from the gas regulator 7, a reoxidation gas will be introduced into the plasma generating chamber 6a in place of the reductive gas from the gas regulator 7.
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