Invention Grant
US08088297B2 Combined etching and doping media for silicon dioxide layers and underlying silicon
失效
用于二氧化硅层和下层硅的组合蚀刻和掺杂介质
- Patent Title: Combined etching and doping media for silicon dioxide layers and underlying silicon
- Patent Title (中): 用于二氧化硅层和下层硅的组合蚀刻和掺杂介质
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Application No.: US11995449Application Date: 2006-06-13
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Publication No.: US08088297B2Publication Date: 2012-01-03
- Inventor: Armin Kuebelbeck , Werner Stockum
- Applicant: Armin Kuebelbeck , Werner Stockum
- Applicant Address: DE Darmstadt
- Assignee: Merck Patent GmbH
- Current Assignee: Merck Patent GmbH
- Current Assignee Address: DE Darmstadt
- Agency: Millen, White, Zelano, Branigan, P.C.
- Priority: DE102005032807 20050712
- International Application: PCT/EP2006/005628 WO 20060613
- International Announcement: WO2007/006381 WO 20070118
- Main IPC: B44C1/22
- IPC: B44C1/22 ; C23F1/00
Abstract:
The present invention relates firstly to HF/fluoride-free etching and doping media which are suitable both for the etching of silicon dioxide layers and also for the doping of underlying silicon layers. The present invention also relates secondly to a process in which these media are employed.
Public/Granted literature
- US20080210298A1 Combined Etching and Doping Media for Silicon Dioxide Layers and Underlying Silicon Public/Granted day:2008-09-04
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