The present invention discloses a warm-white-light emitting diode has the substrate of indium gallium nitride (InGaN) heterojunction containing a large amount of quantum wells and having a light conversion polymer layer, characterized by that the light conversion polymer layer is uniform in concentration, the light-emitting surface and edges of the indium gallium nitride heterojunction are covered with a thermosetting polymer, and the light conversion polymer layer contains some fluorescent powders, which are formed as at least two particle layers in the light conversion polymer layer to ensure the light transmitted reaching 20% of the first-order blue light and 70˜80% of the second-order orange-yellow light from the indium gallium nitride heterojunction. The present invention also discloses a fluorescent powder.