Invention Grant
US08088503B2 Chemical solution deposition method of fabricating highly aligned MgO templates
有权
制备高度排列的MgO模板的化学溶液沉积方法
- Patent Title: Chemical solution deposition method of fabricating highly aligned MgO templates
- Patent Title (中): 制备高度排列的MgO模板的化学溶液沉积方法
-
Application No.: US12363035Application Date: 2009-01-30
-
Publication No.: US08088503B2Publication Date: 2012-01-03
- Inventor: Mariappan Parans Paranthaman , Srivatsan Sathyamurthy , Tolga Aytug , Paul N Arendt , Liliana Stan , Stephen R Foltyn
- Applicant: Mariappan Parans Paranthaman , Srivatsan Sathyamurthy , Tolga Aytug , Paul N Arendt , Liliana Stan , Stephen R Foltyn
- Applicant Address: US TN Oak Ridge US CA Oakland
- Assignee: UT-Battelle, LLC,The Regents of the University of California
- Current Assignee: UT-Battelle, LLC,The Regents of the University of California
- Current Assignee Address: US TN Oak Ridge US CA Oakland
- Agent Joseph A. Marasco
- Main IPC: H01B12/00
- IPC: H01B12/00 ; B05D5/12 ; H01L39/24

Abstract:
A superconducting article includes a substrate having an untextured metal surface; an untextured barrier layer of La2Zr2O7 or Gd2Zr2O7 supported by and in contact with the surface of the substrate; a biaxially textured buffer layer supported by the untextured barrier layer; and a biaxially textured superconducting layer supported by the biaxially textured buffer layer. Moreover, a method of forming a buffer layer on a metal substrate includes the steps of: providing a substrate having an untextured metal surface; coating the surface of the substrate with a barrier layer precursor; converting the precursor to an untextured barrier layer; and depositing a biaxially textured buffer layer above and supported by the untextured barrier layer.
Public/Granted literature
- US20090137401A1 Chemical Solution Deposition Method of Fabricating Highly Aligned MgO Templates Public/Granted day:2009-05-28
Information query