Invention Grant
US08088546B2 Underlayer coating forming composition for lithography containing naphthalene ring having halogen atom 有权
含有萘环的具有卤素原子的光刻用底层涂料组合物

Underlayer coating forming composition for lithography containing naphthalene ring having halogen atom
Abstract:
There is provided an underlayer coating forming composition for lithography, and an underlayer coating having a high dry etching rate compared with photoresist, and causing no intermixing with the photoresist, which are used in lithography process of manufacture of semiconductor device. Concretely, it is an underlayer coating forming composition comprising a polymer having a structural unit containing naphthalene ring substituted with halogen atom in a molar ratio of 0.3 or more in the structural units constituting the polymer, a solvent.
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