Invention Grant
- Patent Title: Method of forming patterns
- Patent Title (中): 形成图案的方法
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Application No.: US12959147Application Date: 2010-12-02
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Publication No.: US08088557B2Publication Date: 2012-01-03
- Inventor: Hideaki Tsubaki
- Applicant: Hideaki Tsubaki
- Applicant Address: JP Tokyo
- Assignee: Fujifilm Corporation
- Current Assignee: Fujifilm Corporation
- Current Assignee Address: JP Tokyo
- Agency: Sughrue Mion, PLLC
- Priority: JP2007-155323 20070612
- Main IPC: G03F7/00
- IPC: G03F7/00 ; G03F7/004 ; G03F7/26 ; G03F7/32 ; G03F7/40
Abstract:
A method of forming patterns includes (a) coating a substrate with a resist composition for negative development to form a resist film having a receding contact angle of 70 degrees or above with respect to water, wherein the resist composition for negative development contains a resin capable of increasing the polarity by the action of an acid and becomes more soluble in a positive developer and less soluble in a negative developer upon irradiation with an actinic ray or radiation, (b) exposing the resist film via an immersion medium, and (c) performing development with a negative developer.
Public/Granted literature
- US20110076625A1 METHOD OF FORMING PATTERNS Public/Granted day:2011-03-31
Information query
