Invention Grant
- Patent Title: Bistable resistance value acquisition device, manufacturing method thereof, metal oxide thin film, and manufacturing method thereof
- Patent Title (中): 双稳态电阻值采集装置及其制造方法，金属氧化物薄膜及其制造方法
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Application No.: US12954316Application Date: 2010-11-24
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Publication No.: US08088644B2Publication Date: 2012-01-03
- Inventor: Yoshito Jin , Hideaki Sakai , Masaru Shimada
- Applicant: Yoshito Jin , Hideaki Sakai , Masaru Shimada
- Applicant Address: JP Tokyo
- Assignee: Nippon Telegraph and Telephone Corporation
- Current Assignee: Nippon Telegraph and Telephone Corporation
- Current Assignee Address: JP Tokyo
- Agency: Blakely, Sokoloff, Taylor & Zafman
- Priority: JP2004/214849 20040722; JP2004/214851 20040722; JP2004/214858 20040722; JP2004/214863 20040722; JP2004/319088 20041102; JP2004/357429 20041209; JP2004/361152 20041214; JP2004/361199 20041214; JP2005/006254 20050113; JP2005/010202 20050118; JP2005/052655 20050228; JP2005/068839 20050311; JP2005/068853 20050311; JP2005/070723 20050314; JP2005/091097 20050328; JP2005/097714 20050330; JP2005/111756 20050408
- Main IPC: H01L29/02
- IPC: H01L29/02
Abstract:
A ferroelectric layer (104) is sandwiched between a lower electrode layer (103) and an upper electrode (105). When a predetermined voltage (DC or pulse) is applied between the lower electrode layer (103) and the upper electrode (105) to change the resistance value of the ferroelectric layer (104) to switch a stable high resistance mode and low resistance mode, a memory operation is obtained. A read can easily be done by reading a current value when a predetermined voltage is applied to the upper electrode (105).
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