Invention Grant
US08088652B2 Electron device using oxide semiconductor and method of manufacturing the same
有权
使用氧化物半导体的电子器件及其制造方法
- Patent Title: Electron device using oxide semiconductor and method of manufacturing the same
- Patent Title (中): 使用氧化物半导体的电子器件及其制造方法
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Application No.: US12949389Application Date: 2010-11-18
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Publication No.: US08088652B2Publication Date: 2012-01-03
- Inventor: Ryo Hayashi , Masafumi Sano
- Applicant: Ryo Hayashi , Masafumi Sano
- Applicant Address: JP Tokyo
- Assignee: Canon Kabushiki Kaisha
- Current Assignee: Canon Kabushiki Kaisha
- Current Assignee Address: JP Tokyo
- Agency: Fitzpatrick, Cella, Harper & Scinto
- Priority: JP2007-136697 20070523
- Main IPC: H01L21/00
- IPC: H01L21/00
Abstract:
In an electron device in which plural thin film transistors each having at least a source electrode, a drain electrode, a semiconductor region including a channel, a gate insulation film and a gate electrode are provided on a substrate, a device separation region provided between the plural thin film transistors and the semiconductor region are constituted by a same metal oxide layer, and resistance of the semiconductor region is formed to be lower than resistance of the device separation region.
Public/Granted literature
- US20110065269A1 ELECTRON DEVICE USING OXIDE SEMICONDUCTOR AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2011-03-17
Information query
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