Invention Grant
US08088657B2 Integrated circuit using FinFETs and having a static random access memory (SRAM)
有权
使用FinFET并具有静态随机存取存储器（SRAM）的集成电路
- Patent Title: Integrated circuit using FinFETs and having a static random access memory (SRAM)
- Patent Title (中): 使用FinFET并具有静态随机存取存储器（SRAM）的集成电路
-
Application No.: US12785829Application Date: 2010-05-24
-
Publication No.: US08088657B2Publication Date: 2012-01-03
- Inventor: James D. Burnett , Leo Mathew , Byoung W. Min
- Applicant: James D. Burnett , Leo Mathew , Byoung W. Min
- Applicant Address: US TX Austin
- Assignee: Freescale Semiconductor, Inc.
- Current Assignee: Freescale Semiconductor, Inc.
- Current Assignee Address: US TX Austin
- Main IPC: H01L21/8244
- IPC: H01L21/8244 ; H01L29/78
Abstract:
An integrated circuit includes a logic circuit and a memory cell. The logic circuit includes a P-channel transistor, and the memory cell includes a P-channel transistor. The P-channel transistor of the logic circuit includes a channel region. The channel region has a portion located along a sidewall of a semiconductor structure having a surface orientation of (110). The portion of the channel region located along the sidewall has a first vertical dimension that is greater than a vertical dimension of any portion of the channel region of the P-channel transistor of the memory cell located along a sidewall of a semiconductor structure having a surface orientation of (110).
Public/Granted literature
- US20100230762A1 INTEGRATED CIRCUIT USING FINFETS AND HAVING A STATIC RANDOM ACCESS MEMORY (SRAM) Public/Granted day:2010-09-16
Information query
IPC分类:
