Invention Grant
- Patent Title: Method for manufacturing substrate of semiconductor device
- Patent Title (中): 半导体器件用基板的制造方法
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Application No.: US12078099Application Date: 2008-03-27
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Publication No.: US08088669B2Publication Date: 2012-01-03
- Inventor: Shunpei Yamazaki
- Applicant: Shunpei Yamazaki
- Applicant Address: JP Atsugi-shi, Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Atsugi-shi, Kanagawa-ken
- Agency: Robinson Intellectual Property Law Office, P.C.
- Agent Eric J. Robinson
- Priority: JP2007-125192 20070510
- Main IPC: H01L21/30
- IPC: H01L21/30 ; H01L21/46
Abstract:
A method for manufacturing a substrate of a semiconductor device is provided, which comprises a step of forming a fragile layer in a semiconductor substrate by irradiating the semiconductor substrate with ion species, a step of forming a bonding layer over the semiconductor substrate, a step of bonding the semiconductor substrate and a substrate having an insulating surface with the bonding layer interposed therebetween, a step of separating the semiconductor substrate with a semiconductor layer left over the substrate having the insulating surface by heating at least the semiconductor substrate, and a step of reprocessing the semiconductor substrate from which the semiconductor layer is separated.
Public/Granted literature
- US20080280420A1 Method for manufacturing substrate of semiconductor device Public/Granted day:2008-11-13
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