Invention Grant
- Patent Title: Defectivity of post thin layer separation by modification of its separation annealing
- Patent Title (中): 通过修改分离退火对薄层分离后的缺陷
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Application No.: US12529482Application Date: 2008-03-18
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Publication No.: US08088671B2Publication Date: 2012-01-03
- Inventor: Walter Schwarzenbach , Nadia Ben Mohamed , Fleur Guittard
- Applicant: Walter Schwarzenbach , Nadia Ben Mohamed , Fleur Guittard
- Applicant Address: FR Bernin
- Assignee: S.O.I.Tec Silicon on Insulator Technologies
- Current Assignee: S.O.I.Tec Silicon on Insulator Technologies
- Current Assignee Address: FR Bernin
- Agency: Winston & Strawn LLP
- Priority: FR0754135 20070329
- International Application: PCT/IB2008/000747 WO 20080318
- International Announcement: WO2008/120079 WO 20081009
- Main IPC: H01L21/30
- IPC: H01L21/30

Abstract:
A method of detaching two substrates at the embrittlement zone situated at a given depth of one of the two substrates. The method includes a separation annealing step implemented in a furnace, wherein the annealing includes a first phase during which the temperature changes along an upgrade allowing a high temperature to be reached and annealing at this high temperature to be stabilized, and a second phase during which the temperature changes along a downgrade, at the end of which the furnace is opened to unload the substrates from the furnace. The second phase is regulated so as to minimize temperature inhomogeneities such as cleavage defects at the detached surfaces of the substrates when the furnace is opened.
Public/Granted literature
- US20100105217A1 DEFECTIVITY OF POST THIN LAYER SEPARATION BY MODIFICATION OF ITS SEPARATION ANNEALING Public/Granted day:2010-04-29
Information query
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