Invention Grant
- Patent Title: Semiconductor chip having island dispersion structure and method for manufacturing the same
- Patent Title (中): 具有岛分散结构的半导体芯片及其制造方法
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Application No.: US12971854Application Date: 2010-12-17
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Publication No.: US08088673B2Publication Date: 2012-01-03
- Inventor: Kiyonori Oyu , Shigeru Aoki
- Applicant: Kiyonori Oyu , Shigeru Aoki
- Applicant Address: JP Tokyo
- Assignee: Elpida Memory Inc.
- Current Assignee: Elpida Memory Inc.
- Current Assignee Address: JP Tokyo
- Agency: McDermott Will & Emery LLP
- Priority: JP2005-345056 20051130
- Main IPC: H01L21/78
- IPC: H01L21/78
Abstract:
The present invention has an object to provide a semiconductor chip of high reliability with less risk of breakage. Specifically, the present invention provides a semiconductor chip having a semiconductor silicon substrate including a semiconductor device layer and a porous silicon domain layer, the semiconductor device layer being provided in a main surface region on one surface of the semiconductor silicon substrate, the porous silicon domain layer being provided in a main surface region on a back surface which is the other surface of the semiconductor silicon substrate, and the porous silicon domain layer having porous silicon domains dispersed like islands in the back surface of the semiconductor silicon substrate.
Public/Granted literature
- US20110086493A1 SEMICONDUCTOR CHIP HAVING ISLAND DISPERSION STRUCTURE AND METHOD FOR MANUFACTURING THE SAME Public/Granted day:2011-04-14
Information query
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