Invention Grant
US08088674B2 Method of growing, on a dielectric material, nanowires made of semi-conductor materials connecting two electrodes
有权
在介电材料上生长由连接两个电极的半导体材料制成的纳米线的方法
- Patent Title: Method of growing, on a dielectric material, nanowires made of semi-conductor materials connecting two electrodes
- Patent Title (中): 在介电材料上生长由连接两个电极的半导体材料制成的纳米线的方法
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Application No.: US12743852Application Date: 2008-11-27
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Publication No.: US08088674B2Publication Date: 2012-01-03
- Inventor: Thomas Ernst , Thierry Baron , Pierre Ferret , Pascal Gentile , Bassem Salem
- Applicant: Thomas Ernst , Thierry Baron , Pierre Ferret , Pascal Gentile , Bassem Salem
- Applicant Address: FR Paris FR Paris
- Assignee: Commissariat a l'Energie Atomique,Centre National de al Recherche Scientifique
- Current Assignee: Commissariat a l'Energie Atomique,Centre National de al Recherche Scientifique
- Current Assignee Address: FR Paris FR Paris
- Agency: Oliff & Berridge, PLC
- Priority: FR0708351 20071128
- International Application: PCT/FR2008/001651 WO 20081127
- International Announcement: WO2009/098398 WO 20090813
- Main IPC: H01L21/36
- IPC: H01L21/36
Abstract:
Electrodes made from metallic material are formed on a layer of dielectric material. A bottom layer of at least one of the electrodes constitutes a catalyst material in direct contact with the layer of dielectric material. Nanowires are grown by means of the catalyst, between the electrodes, parallel to the layer of dielectric material. The nanowires connecting the two electrodes are then made from single-crystal semi-conductor material and in contact with the layer of dielectric material.
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