A first aspect of the present invention provides a semiconductor manufacturing apparatus including: a load lock chamber; a transfer chamber; and a treatment chamber 1 and a treatment chamber 2 which carry out treatment using plasma, wherein, in the treatment chamber 2, an exhaust means is provided with a control means for making an oxygen partial pressure into 1*10−5 [Pa] or less. A second aspect of the present invention provides a method for forming a high dielectric constant film and a metal electrode successively, the method including the steps of: (1) depositing a metal film on a silicon oxide film or a silicon oxynitride film in the treatment chamber 1; (2) forming, in the treatment chamber 2, a high dielectric constant film by using the metal film formed in the treatment chamber 1; and (3) depositing, in the treatment chamber 1 or a treatment chamber 3 installed additionally, a metal electrode material on the high dielectric film formed in the treatment chamber 2, wherein the steps are carried out successively without being exposed to the atmosphere.